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| FJT44 NPN Epitaxial Silicon Transistor September 2006 FJT44 NPN Epitaxial Silicon Transistor * tm High Voltage Transistor 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Value 500 400 6 300 Units V V V mA W C C (Ta = 25 oC) 2 150 - 55 ~ +150 Junction Temperature Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25C unless otherwise noted a Symbol RJA Parameter Thermal Resistance, Junction to Ambient Value 62.5 Units C/W * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm 2 Electrical Characteristics* Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO hFE Ta = 25C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Test Conditions IC = 100uA, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCB = 400V IE = 0 VCE = 400V, VBE = 0 VCE = 4V, IC = 0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC = 1mA, IB = 0.1mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA VCB = 20V, IE = 0, f = 1MHz Min. 500 400 6 Typ. Max. Units V V V 100 500 100 40 50 45 40 nA nA nA 200 VCE(sat) Collector-Emitter Saturation Voltage 0.4 0.5 0.75 0.75 7 V V V V pF VBE(sat) Cobo Base-Emitter Saturation Voltage Output Capacitance * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJT44 Rev. B FJT44 NPN Epitaxial Silicon Transistor Typical Performance Characteristics 160 10 VCE=10V 140 120 hFE, DC CURRENT GAIN VCC=150V IC/IB=10 o Ta=25 C VBE(off)=4V 100 60 40 20 0 -20 -40 1 10 100 1000 10000 t[us], TIME 80 1 tf td 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Turn-On Switching Times 100 1000 Cib[pF],Cob[pF], CAPACITANCE VCC=150V IC/IB=10 Ta=25 10 Ta=25 C f=1MHz o 100 t[us], TIME Cib ts 1 10 Cob tf 0.1 1 10 100 1 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Turn-Off Switching Times Figure 4. Capacitance 1.0 0.5 VCE[V] COLLECTOR EMITTER VOLTAGE Ta=25 C 0.8 o IC=1mA 0.4 IC=10mA IC=50mA Ta=25 c o VBE(sat) @IC/IB=10 [V], VOLTAGE 0.6 0.3 VBE(on) @VCE=10V 0.4 0.2 0.2 VCE(sat)@IC/IB=10 0.1 0.0 0.1 1 10 100 1000 0.0 10 100 1000 10000 100000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. On Voltage Figure 6. Collector Saturation Region 2 FJT44 Rev. B www.fairchildsemi.com FJT44 NPN Epitaxial Silicon Transistor Typical Performance Characteristics 100 hFE, SMALL SIGNAL CURRENT GAIN VCE=10V f=10MHz o Ta=25 C 10 1 0.1 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 1. High Frequency Current Gain 3 FJT44 Rev. B www.fairchildsemi.com FJT44 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-223 0.08MAX 3.00 0.10 MAX1.80 1.75 0.20 3.50 0.20 (0.60) 0.65 0.20 +0.04 0.06 -0.02 2.30 TYP (0.95) 4.60 0.25 0.70 0.10 (0.95) +0.10 0.25 -0.05 (0.60) 0~ 10 1.60 0.20 (0.46) (0.89) 6.50 0.20 7.00 0.30 Dimensions in Millimeters 4 FJT44 Rev. B www.fairchildsemi.com FJT44 NPN Epitaxial Silicon Transistor FJT44 NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 FJT44 Rev. B www.fairchildsemi.com |
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